This website requires JavaScript.

Electric field tunable edge transport in Bernal stacked trilayer graphene

Saurabh Kumar SrivastavAdithi UdupaK. WatanabeT. TaniguchiDiptiman SenAnindya Das
Feb 2024
0被引用
0笔记
摘要原文
This letter presents a non-local study on the electric field tunable edge transport in an hBN-encapsulated dual-gated Bernal stacked (ABA) trilayer graphene across various displacement fields ($D$) and temperatures ($T$). Our measurements revealed that the non-local resistance ($R_{NL}$) surpassed the expected classical ohmic contribution by a factor of at least two orders of magnitude. Through scaling analysis, we found that the non-local resistance scales linearly with the local resistance ($R_{L}$) only when the $D$ exceeds a critical value of $\sim0.2$ V/nm. Additionally, we observed that the scaling exponent remains constant at unity for temperatures below the bulk-band gap energy threshold ($T<25$ K). Further, the value of $R_{NL}$ decreases in a linear fashion as the channel length ($L$) increases. These experimental findings provide evidence for edge-mediated charge transport in ABA trilayer graphene under the influence of a finite displacement field. Furthermore, our theoretical calculations support these results by demonstrating the emergence of dispersive edge modes within the bulk-band gap energy range when a sufficient displacement field is applied.
展开全部
机器翻译
AI理解论文&经典十问
图表提取
参考文献
发布时间 · 被引用数 · 默认排序
被引用
发布时间 · 被引用数 · 默认排序
社区问答