[PDF] Magnetic-field-induced corner states in quantum spin Hall insulators-论文阅读讨论-ReadPaper

摘要

We treat the general problem of magnetic-field-induced corner states inquantum spin Hall insulators based on zinc-blende semiconductor quantum wells(QWs). An analysis performed within the \emph{continuous} Bernevig-Hughes-Zhang(BHZ) model reveals that the gapped edge states are described by``generalized'' 1D Dirac equation with \emph{two mass parameters}, whose valuesdepend on crystallographic orientation of the edge and that of the magneticfield. Although the mass parameters do not vanish simultaneously, an analyticalsolution in the form of ``topological domain wall mode'' confirms the existenceof corner state at the intersection of two adjacent edges. Surprisingly, theexistence of the corner states induced by an in-plane magnetic field do notrequire a crystal symmetry of zinc-blende semiconductor QW, making our resultsuniversal for any quantum spin Hall insulators with isotropic edge-stateg-factor. On the contrary, the corner states induced by an out-of-planemagnetic field arise only due to the absence of an inversion center inzinc-blende semiconductor QWs.

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