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Tunable Quantum Anomalous Hall Effects in Ferromagnetic van der Waals Heterostructures

Feng XueYusheng HouZhe Wang ...+4 Wenhui Duan
Dec 2022
摘要
The quantum anomalous Hall effect (QAHE) has unique advantages in topotronicapplications, but it is still challenging to realize the QAHE with tunablemagnetic and topological properties for building functional devices. Throughsystematic first-principles calculations, we predict that the in-planemagnetization induced QAHE with Chern numbers C = $\pm$1 and the out-of-planemagnetization induced QAHE with high Chern numbers C = $\pm$3 can be realizedin a single material candidate, which is composed of van der Waals (vdW)coupled Bi and MnBi$_2$Te$_3$ monolayers. The switching between differentphases of QAHE can be controllable by multiple ways, such as applying strain or(weak) magnetic field or twisting the vdW materials. The prediction of anexperimentally available material system hosting robust, highly tunable QAHEwill stimulate great research interest in the field. Our work opens a newavenue for the realization of tunable QAHE and provides a practical materialplatform for the development of topological electronics.
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