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DOI: 10.1038/s41699-022-00353-1

Domain Wall Enabled Steep Slope Switching in MoS$_2$ Transistors Towards Hysteresis-Free Operation

Jingfeng SongYubo QiZhiyong Xiao ...+5 Xia Hong
Aug 2019
摘要
The device concept of ferroelectric-based negative capacitance (NC)transistors offers a promising route for achieving energy-efficient logicapplications that can outperform the conventional semiconductor technology,while viable operation mechanisms remain a central topic of debate. In thiswork, we report steep slope switching in MoS$_2$ transistors back-gated bysingle-layer polycrystalline PbZr$_{0.35}$Ti$_{0.65}$O$_3$. The devices exhibitcurrent on/off ratios up to 8$\times$10$^6$ within an ultra-low gate voltagewindow of $V_g$ = $\pm$0.5 V and subthreshold swing (SS) as low as 9.7 mVdecade$^{-1}$ at room temperature, transcending the 60 mV decade$^{-1}$Boltzmann limit without involving additional dielectric layers. Theoreticalmodeling reveals the dominant role of the metastable polar states within domainwalls in enabling the NC mode, which is corroborated by the relation between SSand domain wall density. Our findings shed light on a hysteresis-free mechanismfor NC operation, providing a simple yet effective material strategy fordeveloping low-power 2D nanoelectronics.
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