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First principles-based screening method for resistivity scaling of anisotropic metals

Kristof MoorsKiroubanand SankaranGeoffrey PourtoisChristoph Adelmann
摘要
The resistivity scaling of metals is a crucial factor for further downscalingof interconnects in nanoelectronic devices that affects signal delay, heatproduction, and energy consumption. Here, we present a screening method formetals with highly anisotropic band structures near the Fermi level with theaim to select promising materials in terms of their electronic transportproperties and their resistivity scaling at the nanoscale. For this, weconsider a temperature-dependent transport tensor, based on band structuresobtained from first principles. This transport tensor allows for astraightforward comparison between different anisotropic metals innanostructures with different lattice orientations. By evaluating thetemperature dependence of the tensor components, we also find strong deviationsfrom the zero-temperature transport properties at standard operatingtemperature conditions around room temperature.
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